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TC55257BFL-10L - 85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM

TC55257BFL-10L_332490.PDF Datasheet

 
Part No. TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257BSPL-10 TC55257BFL TC55257BFL-10 TC55257BFL-85L TC55257BFTL TC55257BFTL-10 TC55257BFTL-10L TC55257BFTL-85 TC55257BFTL-85L TC55257BPL-10L TC55257BTRL-85L TC55257BPL TC55257BPL-85 TC55257BPL-85L TC55257BSPL TC55257BSPL-10L TC55257BSPL-85 TC55257BSPL-85L TC55257BTRL TC55257BTRL-10 TC55257BTRL-10L TC55257BTRL-85
Description 85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM

File Size 424.06K  /  9 Page  

Maker


TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.



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Part: TC55257BFL-10
Maker: TOSHIBA(东芝)
Pack: SOP
Stock: 264
Unit price for :
    50: $2.40
  100: $2.28
1000: $2.16

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 Full text search : 85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM


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